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Xi'an Zhiyue Material Tech. Co., Ltd.
Xi'an Zhiyue Material Tech. Co., Ltd.

Gallium Nitride Target (GaN)

Gallium Nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light emitting diodes since the 1990s. The compound, GaN sputtering target, is a very hard material with a zincite crystal structure. GaN target's wide bandgap of 3.4 eV provides exceptional properties for applications in optoelectronic, high power and high frequency devices.


Purity: 99.99%   

CAS: 25617-97-4

Size: Customer-made

  • gan target
  • gan target

Application of Gallium Nitride Target (GaN)

1

GaN sputtering target has a low sensitivity to ionizing radiation (like other Group III nitrides), making it a suitable material for satellite solar cell arrays. 

2

Military and space applications of GaN target may also benefit as equipment exhibits stability in radiation environments.

Product Overview

  • Chemical Formula: GaN

  • CAS Number: 25617-97-4

  • Purity: ≥99.99% (4N), available up to 5N upon request

  • Forms: Planar target (disc, rectangular), bonded target assemblies

  • Typical Densification: ≥95% of theoretical density

  • Manufacturing Process: Hot pressing / cold isostatic pressing + sintering

  • Backing Plate Options: Molybdenum (Mo), Copper (Cu), or custom alloys

  • Standard Sizes: 1", 2", 3", 4", 6" – custom sizes available



Why Choose Zhiyue’s GaN Sputtering Targets?

AttributeTechnical Advantage

High Density, Low Porosity

Reduces arcing, particle generation, and increases film uniformity.

Excellent Thermal Stability

Critical for high-power, high-temperature deposition environments.

High Purity

≥99.99% reduces oxygen/carbon contamination—essential for optoelectronics and RF devices.

Strong Bonding Options

Reliable indium bonding with excellent thermal conduction and mechanical strength.


Products

Gallium Nitride Target (GaN) Technical Support

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