Hafnium Oxide Powder (HfO2)

Specification of Hafnium Oxide (HfO₂) Powder

• Chemical Name: Hafnium(IV) Oxide

• Chemical Formula: HfO₂

• CAS Number: 12055‑23‑1

• Appearance: White to off‑white powder

• Purity: Typical grades: ≥ 99.9% HfO₂ (or HfO₂ + ZrO₂ basis)

• Particle Size / Mesh: >95% retained on −325 mesh (~45 µm); typical median particle size ~1–5 µm; BET surface area ~3–5 m²/g

• Density (Theoretical): ~9.68 g/cm³

• Melting Point: ~2,700–2,800 °C (various sources list ~2,758 °C)

• Boiling Point: ~5,400 °C

• Crystal Structure: Monoclinic (room‑temperature form)

• Typical Impurity Limits (for high‑purity grades):

• Zr<0.5% (in some spec sheets)

• Other trace metals (Fe, Si, Ti, etc) typically at<50 ppm in top grades

• Bulk Density (as‑received powder): ~70‑80 lb/ft³ (≈1.12‑1.28 g/cm³) for certain grades

• Solubility: Insoluble in water; chemically stable under standard conditions

Notes for Buyers & Users

• High‑purity HfO₂ powders (99.9%+) are especially important for electronics, optical coatings, and thin‑film deposition because trace impurities can significantly affect dielectric, optical or film growth behavior.

• The finer particle size (<5 µm) is beneficial for sintering, uniform deposition, and thinner film applications; coarser particles may be used where loading or additive content is more important than surface finish.

• Because HfO₂ is a refractory oxide with a high melting point and high density, it is suitable for applications requiring high thermal stability, radiation/oxidation resistance, and high‑temperature performance.

• Storage and handling: While HfO₂ is relatively inert, powders should be stored in a dry environment, and handling under inert or controlled atmosphere is recommended when high‑purity is required to avoid contamination or uptake of moisture/adsorbates.

• Packaging: Typical packaging for high‑purity powder includes vacuum‑sealed or inert‑gas purged containers (bags or drums) with inert liner to protect from moisture and contamination.

Advantages of Hafnium Oxide (HfO₂) Powder

• Hafnium oxide (HfO₂) powder is highly valued in advanced material systems for its exceptional dielectric and thermal properties. With a wide band gap (≈ 5.3–5.7 eV) and a high dielectric constant compared with traditional oxides, Hf oxide is a preferred material for high‑k dielectrics, non‑volatile memory components, and thin‑film electronic interfaces. Its excellent electrical insulation combined with compatibility in CMOS environments makes it extremely attractive for demanding microelectronics and thin‑film deposition applications.

• Beyond its electrical advantages, HfO₂ powder exhibits outstanding thermal and chemical stability. Its melting point approaches ~2,700–2,800 °C, and the material remains inert under many high‑temperature and vacuum conditions. This resilience makes HfO₂ a smart choice for protective coatings, refractory components, and high‑performance ceramics where long‑term reliability in aggressive environments is essential.

• From a materials processing standpoint, the availability of high‑purity HfO₂ powders with controlled particle size and phase purity offers significant benefits. Whether used as a feedstock for sputtering targets, atomic layer deposition (ALD), or sintered ceramic components, such powders support uniform film growth, repeatable deposition behavior, and minimal defect density. This engineering‑grade consistency is particularly important for R&D and production‑scale applications in optics, semiconductors, and surface engineering.

• Finally, HfO₂ powder has broad application versatility—from thin‑film dielectrics and ferroelectric memory to high‑temperature structural ceramics and environmental barrier coatings. For manufacturers and engineers seeking a material that bridges electronic performance, thermal durability, and process‑compatibility, HfO₂ delivers an impressive multi‑functional profile.

Characteristics of Hafnium Oxide Powder (HfO2)

Hafnium dioxide (HfO2) is an inorganic compound also known as hafnium, which is one of the most common and stable hafnium compounds. This colorless solid is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes for producing hafnium metal.

Uses of Hafnium Oxide Powder (HfO2)

Hafnium dioxide (as well as doped and oxygen-deficient hafnium dioxide) has attracted additional interest as a potential candidate material for resistive switching memories, CMOS-compatible ferroelectric field-effect transistors (FeFET memories), and memory chips.